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DIM400DCM17-A000
DIM400DCM17-A000
IGBT Chopper Module
Replaces September 2001, version DS5490-1.1 DS5490-2.0 March 2002
FEATURES
s s s s
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 400A 800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s s
Power Supplies Motor Controllers Traction Drives
5(E1)
1(E1)
2(C2)
6(G1)
The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400DCM17-A000 is a 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7(C1) 3(C1) 4(E2)
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As: DIM400DCM17-A000 Note: When ordering, please use the whole part number.
Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
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DIM400DCM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Diode I2t value (Diode arm) Visol QPD Isolation voltage - per module Partial discharge - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS Tcase = 75C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C VGE = 0V Test Conditions Max. 1700 20 400 800 3470 30 120 4000 10 Units V V A A W kA2s kA2s V pC
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DCM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (IGBT arm) Thermal resistance - diode (Diode arm) Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 80 40 8 C/kW C/kW C/kW Min. Typ. Max. 36 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
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DIM400DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 20mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 IF = 400A, Tcase = 125C DC tp = 1ms IF = 400A Min. 4.5 Typ. 5.5 2.7 3.4 2.2 1.8 2.3 1.8 30 2.5 20 0.27 1850 1600 Max. 1 12 2 6.5 3.2 4.0 400 800 2.5 2.1 2.6 2.1 Units mA mA A V V V A A V V V V nF nF nH m A A
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode arm IGBT arm Irr Diode reverse recovery current Diode arm IGBT arm Erec Diode reverse recovery energy Diode arm IGBT arm IF = 400A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 1150 100 120 250 250 150 4.5 250 100 530 230 160 70 Max. Units ns ns mJ ns ns mJ C C C A A mJ mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
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DIM400DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode arm IGBT arm Irr Diode reverse recovery current Diode arm IGBT arm Erec Diode reverse recovery energy Diode arm IGBT arm IF = 400A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 1400 130 180 400 250 170 425 170 600 270 250 100 Max. Units ns ns mJ ns ns mJ C C A A mJ mJ
6/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DCM17-A000
TYPICAL CHARACTERISTICS
900
800 Vce is measured at power busbars
and not the auxiliary terminals
Common emitter. Tcase = 25C
900
800 Vce is measured at power busbars
and not the auxiliary terminals
Common emitter. Tcase = 125C
700
Collector current, Ic - (A)
700
Collector current, Ic - (A)
600 500 400 300 200 100 0 VGE = 20V 15V 12V 10V 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-emitter voltage, Vce - (V) 4.5 5
600 500 400 300 200 100 0 0 VGE = 20V 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
200
Conditions: Vce = 900V 175 Tc = 125C Rg = 4.7
Switching energy, Esw - (mJ)
400 Conditions: Vce = 900V IC = 400A Tc = 125C 300
150
Switching energy - (mJ)
125 100 75 50 25 0 0 100 200 300 Collector current, IC - (A) 400 500 Eoff Eon Erec
200
100 Eoff Eon Erec 0 0 4 8 12 Gate Resistance, Rg - (Ohms) 16
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
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DIM400DCM17-A000
900
800 700 Arm 3-1: Tj = 25C Arm 3-1: Tj = 125C Arm 2-4: Tj = 25C Arm 2-4: Tj = 125C
VF is measured at power busbars
800 Chip 700 Module
Collector current, IC - (A)
600 and not the auxiliary terminals
Forward current, IF - (A)
600 500 400 300 200
500 400 300 200 100 0 0
0.5
2.0 1.0 1.5 2.5 Forward voltage, VF - (V)
3.0
3.5
Conditions: 100 Tcase = 125C, Vge = 15V, Rg(off) = 4.7ohms 0 0 200 400 600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
1000
Fig. 8 Reverse bias safe operating area
550 Freewheel Diode 500 450
100
Reverse recovery current, Irr - (A)
350 300 250 200 150
Collector current, IC - (A)
400 Antiparallel Diode
tp = 50s tp = 100s IC(max) DC
10
tp = 1 ms
1
100 50 Tj = 125C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000
0.1 1 Tvj = 125C, Tcase = 68C 10 100 1000 Collector-emitter voltage, Vce - (V) 10000
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
8/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DCM17-A000
100
Transient thermal impedance, Zth (j-c) - (C/kW )
Antiparallel Diode
1000 900
Antiparallel Diode
Freewheel Diode
800
Transistor
DC forward current, IF - (A)
700 Freewheel Diode 600 500 400 300 200 100
10
1 0.001
0.01
0.1 Pulse width, tp - (ms)
1
10 4 20.4712 152.6381 51.2136 111.7517 25.6068 111.7517
0 0
20
IGBT
2 3 1 Ri (C/KW) 0.8782 6.3874 8.293 i (ms) 2.8869 21.7141 0.045 Antiparallel Diode Ri (C/KW) 3.1224 11.4852 13.998 i (ms) 0.0063516 1.4746 13.9664 Freewheel Diode Ri (C/KW) 1.5612 5.7426 6.999 i (ms) 0.0063516 1.4746 13.9664
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 11 Transient thermal impedance
Fig. 12 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/11
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DIM400DCM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1050g Module outine type code: D
10/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM400DCM17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5490-2 Issue No. 2.0 March 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/11
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